The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Mar. 02, 2012
Hoi-sung Chung, Hwaseong-si, KR;
Dong-suk Shin, Yongin-si, KR;
Dong-hyuk Kim, Seongnam-si, KR;
Myung-sun Kim, Hwaseong-si, KR;
Hoi-Sung Chung, Hwaseong-si, KR;
Dong-Suk Shin, Yongin-si, KR;
Dong-Hyuk Kim, Seongnam-si, KR;
Myung-Sun Kim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
In a method of manufacturing a transistor, a gate structure is formed on a substrate including silicon. An upper portion of the substrate adjacent to the gate structure is etched to form a first recess in the substrate. A preliminary first epitaxial layer including silicon-germanium is formed in the first recess. An upper portion of the preliminary first epitaxial layer is etched to form a second recess on the preliminary first epitaxial layer. In addition, a portion of the preliminary first epitaxial layer adjacent to the second recess is etched to thereby transform the preliminary first epitaxial layer into a first epitaxial layer. A second epitaxial layer including silicon-germanium is formed in the second recess located on the first epitaxial layer.