The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2014

Filed:

Jul. 21, 2009
Applicants:

Erich F. Haratsch, Bethlehem, PA (US);

Milos Ivkovic, Sunnyvale, CA (US);

Victor Krachkovsky, Allentown, PA (US);

Nenad Miladinovic, Campbell, CA (US);

Andrei Vityaev, San Jose, CA (US);

Johnson Yen, Fremont, CA (US);

Inventors:

Erich F. Haratsch, Bethlehem, PA (US);

Milos Ivkovic, Sunnyvale, CA (US);

Victor Krachkovsky, Allentown, PA (US);

Nenad Miladinovic, Campbell, CA (US);

Andrei Vityaev, San Jose, CA (US);

Johnson Yen, Fremont, CA (US);

Assignee:

LSI Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and apparatus are provided for programming multiple program values per signal level in flash memories. A flash memory device having a plurality of program values is programmed by programming the flash memory device for a given signal level, wherein the programming step comprises a programming phase and a plurality of verify phases. In another variation, a flash memory device having a plurality of program values is programmed, and the programming step comprises a programming phase and a plurality of verify phases, wherein at least one signal level comprises a plurality of the program values. The signal levels or the program values (or both) can be represented using one or more of a voltage, a current and a resistance.


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