The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Jun. 13, 2011
George Gordon, San Jose, CA (US);
Semyon D. Savransky, Newark, CA (US);
Ward Parkinson, Boise, ID (US);
Sergey A. Kostylev, Bloomfield Hills, MI (US);
James Reed, Rochester Hills, MI (US);
Tyler Lowrey, West Augusta, VA (US);
Ilya V. Karpov, Santa Clara, CA (US);
Gianpaolo Spadini, Campbell, CA (US);
George Gordon, San Jose, CA (US);
Semyon D. Savransky, Newark, CA (US);
Ward Parkinson, Boise, ID (US);
Sergey A. Kostylev, Bloomfield Hills, MI (US);
James Reed, Rochester Hills, MI (US);
Tyler Lowrey, West Augusta, VA (US);
Ilya V. Karpov, Santa Clara, CA (US);
Gianpaolo Spadini, Campbell, CA (US);
Ovonyx, Inc., Sterling Heights, MI (US);
Abstract
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.