The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Jan. 18, 2013
Imec, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Janusz Bogdanowicz, Liège, BE;
IMEC, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Abstract
A method for determining an active dopant concentration profile of a semiconductor substrate based on optical measurements is disclosed. The active dopant concentration profile includes a concentration level and a junction depth. In one aspect, the method includes obtaining a photomodulated optical reflectance (PMOR) amplitude offset curve and a PMOR phase offset curve for the semiconductor substrate based on PMOR measurements, determining a decay length parameter based on a first derivative of the amplitude offset curve, determining a wavelength parameter based on a first derivative of the phase offset curve, and determining, from the decay length parameter and the wavelength parameter, the concentration level and the junction depth of the active dopant concentration profile.