The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Sep. 30, 2010
Fethi Dhaoui, Patterson, CA (US);
John Mccollum, Saratoga, CA (US);
Frank Hawley, Campbell, CA (US);
Leslie Richard Wilkinson, Cave Junction, OR (US);
Fethi Dhaoui, Patterson, CA (US);
John McCollum, Saratoga, CA (US);
Frank Hawley, Campbell, CA (US);
Leslie Richard Wilkinson, Cave Junction, OR (US);
Microsemi SoC Corporation, San Jose, CA (US);
Abstract
A non-volatile programmable memory cell suitable for use in a programmable logic array includes a non-volatile MOS transistor of a first conductivity type in series with a volatile MOS transistor of a second conductivity type. The non-volatile MOS transistor may be a floating gate transistor, such as a flash transistor, or may be another type of non-volatile transistor such as a floating charge-trapping SONOS, MONOS transistor, or a nano-crystal transistor. A volatile MOS transistor, an inverter, or a buffer may be driven by coupling its gate or input to the common connection between the non-volatile MOS transistor and the volatile MOS transistor.