The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Jul. 19, 2012
Masato Nishimori, Atsugi, JP;
Toshihide Kikkawa, Machida, JP;
Masato Nishimori, Atsugi, JP;
Toshihide Kikkawa, Machida, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device includes a buffer layer that is disposed over a substrate, a high-resistance layer that is disposed over the buffer layer, the high-resistance layer being doped with a transition metal for achieving high resistance, a low-resistance region that is disposed in a portion of the high-resistance layer or over the high-resistance layer, the low-resistance region being doped with an impurity element for achieving low resistance, an electron travel layer that is disposed over the high-resistance layer including the low-resistance region, an electron supply layer that is disposed over the electron travel layer, a gate electrode that is disposed over the electron supply layer, and a source electrode and a drain electrode that are disposed over the electron supply layer.