The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Feb. 08, 2012
RU Huang, Beijing, CN;
Gengyu Yang, Beijing, CN;
Yimao Cai, Beijing, CN;
Yu Tang, Beijing, CN;
Lijie Zhang, Beijing, CN;
Yue Pan, Beijing, CN;
Shenghu Tan, Beijing, CN;
Yinglong Huang, Beijing, CN;
Ru Huang, Beijing, CN;
Gengyu Yang, Beijing, CN;
Yimao Cai, Beijing, CN;
Yu Tang, Beijing, CN;
Lijie Zhang, Beijing, CN;
Yue Pan, Beijing, CN;
Shenghu Tan, Beijing, CN;
Yinglong Huang, Beijing, CN;
Peking University, Beijing, CN;
Abstract
The present invention discloses a multilevel resistive memory having large storage capacity, which belongs to a field of a fabrication technology of a resistive memory. The resistive memory includes an top electrode and a bottom electrode, and a combination of a plurality of switching layers and defective layers interposed between the top electrode and the bottom electrode, wherein, the top electrode and the bottom electrode are respectively contacted with a switching layer (a film such as TaO, TiO, HfO), and the defective layers (metal film such as Ti, Au, Ag) are interposed between the switching layers. By using the present invention, a storage capacity of a resistive memory can be increased.