The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Oct. 11, 2011
Byung Chun Lee, Beijing, CN;
Tai Sung Choi, Beijing, CN;
Shuibin NI, Beijing, CN;
Pil Seok Kim, Beijing, CN;
Byung Chun Lee, Beijing, CN;
Tai Sung Choi, Beijing, CN;
Shuibin Ni, Beijing, CN;
Pil Seok Kim, Beijing, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Chengdu Boe Optoelectronics Technology Co., Ltd., Chengdu, Sichuan Province, CN;
Abstract
A thin film transistor is provided, which comprises at least an active layer, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located on the active layer and spaced apart from each other; a channel is defined in the active layer between the source electrode and the drain electrode; edges of the active layer are aligned with outer edges of the source electrode and the drain electrode, the outer edge of the source electrode is an edge of the source electrode opposite to the drain electrode, and the outer edge of the drain electrode is an edge of the drain electrode opposite to the source electrode. Also, a method of manufacturing a thin film transistor is provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile