The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Apr. 20, 2007
Mitsuo Sugino, Tokyo, JP;
Takeshi Hosomi, Tokyo, JP;
Masahiro Wada, Tokyo, JP;
Masataka Arai, Tokyo, JP;
Mitsuo Sugino, Tokyo, JP;
Takeshi Hosomi, Tokyo, JP;
Masahiro Wada, Tokyo, JP;
Masataka Arai, Tokyo, JP;
Sumitomo Bakelite Co., Ltd., Tokyo, JP;
Abstract
The semiconductor deviceincludes a substrate, a semiconductor chipmounted on the substrate, the substrate, a bumpconnecting the substrateand the semiconductor chip, and an underfillfilling in around the bump. In the case of a bumpcomposed of a high-melting-point solder having a melting point of 230° C. or more, the underfillis composed of a resin material having an elastic modulus in the range of 30 MPa to 3000 MPa. In the case of a bumpcomposed of a lead-free solder, the underfillis composed of a resin material having an elastic modulus in the range of 150 MPa to 800 MPa. An insulating layerof buildup layersof the substratehas a linear expansion coefficient of 35 ppm/° C. or less in the in-plane direction of the substrate at temperatures in the range of 25° C. to the glass transition temperature.