The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Sep. 21, 2011
Ting Gang Zhu, Somerset, NJ (US);
Marek Pabisz, Quakertown, PA (US);
Ting Gang Zhu, Somerset, NJ (US);
Marek Pabisz, Quakertown, PA (US);
Power Integrations, Inc., San Jose, CA (US);
Abstract
A Schottky diode includes a first nitride-based semiconductor layer disposed atop a substrate. A second nitride-based semiconductor layer is disposed atop a portion of the first nitride-based semiconductor layer. The second layer has a doping concentration lower than that of the first layer. A first Schottky contact metal layer having a first metal work function is disposed on a top planar surface of the second layer, forming a first Schottky junction. A second Schottky contact metal layer having a second metal work function is disposed atop of and laterally surrounding the first Schottky contact metal layer, the metal work function of the second metal layer is higher than that of the first metal layer. A metal layer disposed on first and second planar surfaces forms an ohmic contact with the first nitride-based semiconductor layer.