The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Sep. 26, 2011
Ching-han Yeh, Taninan, TW;
Chen-pin Hsu, Taoyuan, TW;
Ming-yuan Wu, Hsinchu, TW;
Kong-beng Thei, Pao-Shan Village, TW;
Harry Chuang, Hsinchu, TW;
Ching-Han Yeh, Taninan, TW;
Chen-Pin Hsu, Taoyuan, TW;
Ming-Yuan Wu, Hsinchu, TW;
Kong-Beng Thei, Pao-Shan Village, TW;
Harry Chuang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a source and a drain region formed on the semiconductor substrate, and a gate structure disposed on the substrate between the source and drain regions. The gate structure includes an interfacial layer formed over the substrate, a high-k dielectric formed over the interfacial layer, and a metal gate formed over the high-k dielectric that includes a first metal layer and a second metal layer, where the first metal layer is formed on a portion of the sidewalls of the gate structure and where the second metal layer is formed on another portion of the sidewalls of the gate structure.