The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Feb. 06, 2012
Chung Foong Tan, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Sanford Chu, Singapore, SG;
Chung Foong Tan, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Sanford Chu, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
Embodiments of the invention provide an asymmetrical transistor device comprising a semiconductor substrate, a source region, a drain region and a channel region. The channel region is provided between the source and drain regions, the source, drain and channel regions being provided in the substrate. The device has a layer of a buried insulating medium provided below the source region and not below the drain region thereby forming an asymmetrical structure. The layer of buried insulating medium is provided in abutment with a lower surface of the source region.