The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2014

Filed:

Nov. 02, 2010
Applicants:

Byungkyu Cho, Seoul, KR;

Kwang Soo Seol, Yongin-si, KR;

Sunghoi Hur, Seoul, KR;

Jungdal Choi, Seoul, KR;

Inventors:

ByungKyu Cho, Seoul, KR;

Kwang Soo Seol, Yongin-si, KR;

Sunghoi Hur, Seoul, KR;

Jungdal Choi, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a local self-boosting method of a flash memory device including at least one string having memory cells respectively connected to wordlines. The local self-boosting method includes forming a potential well at a channel of the string and forming potential walls at the potential well to be disposed at both sides of a channel of a selected one of the memory cells. The channel of the selected memory cell is locally limited by the potential walls and boosted when a program voltage is applied to the selected memory cell.


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