The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Dec. 02, 2010
Eric Fossum, Wolfeboro, NH (US);
Suk Pil Kim, Gyeonggi-do, KR;
Yoon Dong Park, Gyeonggi-do, KR;
Hoon Sang OH, Gyeonggi-do, KR;
Hyung Jin Bae, Gyeonggi-do, KR;
Tae Eung Yoon, Gyeonggi-do, KR;
Eric Fossum, Wolfeboro, NH (US);
Suk Pil Kim, Gyeonggi-do, KR;
Yoon Dong Park, Gyeonggi-do, KR;
Hoon Sang Oh, Gyeonggi-do, KR;
Hyung Jin Bae, Gyeonggi-do, KR;
Tae Eung Yoon, Gyeonggi-do, KR;
Abstract
Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.