The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Feb. 21, 2012
Louis L. Hsu, Fishkill, NY (US);
Conal E. Murray, Yorktown Heights, NY (US);
Ping-chuan Wang, Hopewell Junction, NY (US);
Chih-chao Yang, Glenmont, NY (US);
Louis L. Hsu, Fishkill, NY (US);
Conal E. Murray, Yorktown Heights, NY (US);
Ping-Chuan Wang, Hopewell Junction, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An IC interconnect for high direct current (DC) that is substantially immune to electro-migration (EM) damage, and a method of manufacture of the IC interconnect are provided. A structure includes a cluster-of-via structure at an intersection between inter-level wires. The cluster-of-via structure includes a plurality of vias each of which are filled with a metal and lined with a liner material. At least two adjacent of the vias are in contact with one another and the plurality of vias lowers current loading between the inter-level wires.