The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Sep. 21, 2011
Chun-chieh Chuang, Hsin-Chu, TW;
Chih-min Lin, Hsinchu, TW;
Ken Wen-chien Fu, Hsinchu, TW;
Dun-nian Yaung, Taipei, TW;
Chun-Chieh Chuang, Hsin-Chu, TW;
Chih-Min Lin, Hsinchu, TW;
Ken Wen-Chien Fu, Hsinchu, TW;
Dun-Nian Yaung, Taipei, TW;
Other;
Abstract
A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.