The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Dec. 16, 2009
Abhijit Bandyopadhyay, San Jose, CA (US);
Franz Kreupl, Mountain View, CA (US);
Andrei Mihnea, San Jose, CA (US);
LI Xiao, San Jose, CA (US);
Abhijit Bandyopadhyay, San Jose, CA (US);
Franz Kreupl, Mountain View, CA (US);
Andrei Mihnea, San Jose, CA (US);
Li Xiao, San Jose, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A carbon/tunneling-barrier/carbon diode and method for forming the same are disclosed. The carbon/tunneling-barrier/carbon may be used as a steering element in a memory array. Each memory cell in the memory array may include a reversible resistivity-switching element and a carbon/tunneling-barrier/carbon diode as the steering element. The tunneling-barrier may include a semiconductor or an insulator. Thus, the diode may be a carbon/semiconductor/carbon diode. The semiconductor in the diode may be intrinsic or doped. The semiconductor may be depleted when the diode is under equilibrium conditions. For example, the semiconductor may be lightly doped such that the depletion region extends from one end of the semiconductor region to the other end. The diode may be a carbon/insulator/carbon diode.