The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Jan. 09, 2012
Reiko Noguchi, Kumamoto, JP;
Kazunori Inoue, Kumamoto, JP;
Masaru Aoki, Kumamoto, JP;
Toshihiko Iwasaka, Kumamoto, JP;
Reiko Noguchi, Kumamoto, JP;
Kazunori Inoue, Kumamoto, JP;
Masaru Aoki, Kumamoto, JP;
Toshihiko Iwasaka, Kumamoto, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.