The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Jun. 30, 2011
Cheng-hsien Wu, Taipei, TW;
Chih-hsin Ko, Fongshan, TW;
Yao-tsung Huang, Kaohsiung, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Cheng-Hsien Wu, Taipei, TW;
Chih-Hsin Ko, Fongshan, TW;
Yao-Tsung Huang, Kaohsiung, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit device and method for manufacturing the same are disclosed. An exemplary device includes a semiconductor substrate having a substrate surface and a trench isolation structure disposed in the semiconductor substrate for isolating an NMOS region of the device and from a PMOS region of the device. The device further includes a first fin structure comprising silicon or SiGe disposed over a layer of III-V semiconductor material having a high band gap energy and a lattice constant greater than that of Ge; a second fin structure comprising silicon or SiGe disposed over a layer of III-V semiconductor material having a high band gap energy and a lattice constant smaller than that of Ge; and a gate structure disposed over and arranged perpendicular to the first and second fin structures.