The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Aug. 29, 2011
Yukie Nishikawa, Fukuoka-ken, JP;
Hironori Yamasaki, Fukuoka-ken, JP;
Katsuyoshi Furuki, Fukuoka-ken, JP;
Takashi Kataoka, Kanagawa-ken, JP;
Yukie Nishikawa, Fukuoka-ken, JP;
Hironori Yamasaki, Fukuoka-ken, JP;
Katsuyoshi Furuki, Fukuoka-ken, JP;
Takashi Kataoka, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.