The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2013

Filed:

Aug. 03, 2011
Applicants:

Gerrit Cornelis Van Hoften, Veldhoven, NL;

Michael Alwin William Stekelenburg, Vught, NL;

Richard Henderson, Cambridge, GB;

Gregory James Mcmullan, Cambridge, GB;

Abdul Raffey Faruqi, Cambridge, GB;

Renato Andrea Danilo Turchetta, Oxford, GB;

Nicola Carlo Guerrini, Didcot, GB;

Joeri Lof, Eindhoven, NL;

Frank Jeroen Pieter Schuurmans, Valkenswaard, NL;

Inventors:

Gerrit Cornelis Van Hoften, Veldhoven, NL;

Michael Alwin William Stekelenburg, Vught, NL;

Richard Henderson, Cambridge, GB;

Gregory James McMullan, Cambridge, GB;

Abdul Raffey Faruqi, Cambridge, GB;

Renato Andrea Danilo Turchetta, Oxford, GB;

Nicola Carlo Guerrini, Didcot, GB;

Joeri Lof, Eindhoven, NL;

Frank Jeroen Pieter Schuurmans, Valkenswaard, NL;

Assignee:

FEI Company, Hillsboro, OR (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/244 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.


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