The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Apr. 26, 2012
Applicants:
Jun-kyu Yang, Seoul, KR;
Phil-ouk Nam, Hwaseong-si, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Jae-young Ahn, Seongnam-si, KR;
Han-mei Choi, Seoul, KR;
Bi-o Kim, Seoul, KR;
Inventors:
Jun-kyu Yang, Seoul, KR;
Phil-ouk Nam, Hwaseong-si, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Jae-young Ahn, Seongnam-si, KR;
Han-mei Choi, Seoul, KR;
Bi-o Kim, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device includes forming a channel region, forming a buffer layer on the channel region, and heat-treating the channel region by using a gas containing halogen atoms.