The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Dec. 16, 2009
Andreas Kurz, Dresden, DE;
Roman Boschke, Dresden, DE;
Christoph Schwan, Dresden, DE;
John Morgan, Dresden, DE;
Andreas Kurz, Dresden, DE;
Roman Boschke, Dresden, DE;
Christoph Schwan, Dresden, DE;
John Morgan, Dresden, DE;
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In SOI devices, the PN junction of circuit elements, such as substrate diodes, is formed in the substrate material on the basis of the buried insulating material that provides increased etch resistivity during wet chemical cleaning and etch processes. Consequently, undue exposure of the PN junction formed in the vicinity of the sidewalls of the buried insulating material may be avoided, which may cause reliability concerns in conventional SOI devices comprising a silicon dioxide material as the buried insulating layer.