The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Jul. 10, 2008
Applicants:
Peter Biolsi, New Windsor, NY (US);
Samuel S. Choi, Beacon, NY (US);
Kevin Mackey, Wappingers Falls, NY (US);
Inventors:
Peter Biolsi, New Windsor, NY (US);
Samuel S. Choi, Beacon, NY (US);
Kevin MacKey, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio during plasma generation and etching. Plasma generation is induced by a source radio frequency and anisotropic etch performance is induced by a second bias radio frequency.