The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Feb. 10, 2012
Seong-ho Moon, Yongin-si, KR;
Artem Shamsuarov, Suwon-si, KR;
Seung-hune Yang, Seoul, KR;
Seong-bo Shim, Suwon-si, KR;
Seong-ho Moon, Yongin-si, KR;
Artem Shamsuarov, Suwon-si, KR;
Seung-hune Yang, Seoul, KR;
Seong-bo Shim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a method of manufacturing a photo-mask having a micro pattern. The method includes providing an analyzing design layout, dividing the analyzing design layout into a two-dimensionally repeated portion, a one-dimensionally repeated portion, and a non-repeated portion, forming a first corrected layout by performing optical proximity correction (OPC) in the two-dimensionally repeated portion, forming a second corrected layout, taking account of the first corrected layout, by performing OPC in the one-dimensionally repeated portion, forming a third corrected layout, taking account of the first corrected layout and the second corrected layout, by performing OPC in the non-repeated portion, and forming a photo-mask based on the first through third corrected layouts.