The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Nov. 21, 2012
Global Foundries Inc., Grand Cayman, KY (US);
Chang A. Wang, Poughkeepsie, NY (US);
Norman Chen, Poughkeepsie, NY (US);
Chidam Kallingal, Poughkeepsie, NY (US);
GLOBAL FOUNDRIES Inc., Grand Cayman, KY;
Abstract
Embodiments of the invention provide approaches for optimizing illumination and polarization for advanced optical lithography. Specifically, an illumination pupil plane of an illumination source is bisected into a plurality of elements. Preferred elements of the illumination pupil plane are selected for a set of integrated circuit (IC) design features. An imaging performance of the set of IC design features for the preferred elements is evaluated at different polarization states to determine an optimal illumination and polarization condition for each IC design feature. Imaging performance of the combined IC design features, evaluated at various optimal illumination and polarization outcomes synthesized at different intensity ratios, is reviewed against a set of design tolerance requirements to finalize optical illumination and polarization conditions for the entire IC design. An optimal illumination and polarization solution is identified for an off-contact pattern with a plurality of sub-resolution assisted features connecting line-line-end portions of main mask features.