The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2013

Filed:

Jan. 11, 2011
Applicants:

Prayag B. Patel, San Diego, CA (US);

Pratyush Kamal, San Diego, CA (US);

Foua Vang, San Diego, CA (US);

Chock H. Gan, San Diego, CA (US);

PR Chidambaram, San Diego, CA (US);

Chethan Swamynathan, Bangalore, IN;

Inventors:

Prayag B. Patel, San Diego, CA (US);

Pratyush Kamal, San Diego, CA (US);

Foua Vang, San Diego, CA (US);

Chock H. Gan, San Diego, CA (US);

Pr Chidambaram, San Diego, CA (US);

Chethan Swamynathan, Bangalore, IN;

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus fabricated using a standard cell architecture including devices having different voltage thresholds may include a first set of polylines associated with a first channel length, where each polyline within the first set of polylines is separated by a substantially constant pitch. The apparatus may further include a second set of polylines associated with a second channel length and aligned with the first set of polylines, where each polyline within the second set of polylines is laterally separated by the substantially constant pitch. The apparatus may further include a first active region below the first set of polylines, and a second active region below the second set of polylines, where the first active region and the second active region are separated by a distance of less than 170 nm.


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