The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8609537 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 17, 2013

Filed:

Jul. 23, 2012
Applicants:

Richard P. Volant, New Fairfield, CT (US);

Mukta G. Farooq, Hopewell Junction, NY (US);

Kevin S. Petrarca, Newburgh, NY (US);

Inventors:

Richard P. Volant, New Fairfield, CT (US);

Mukta G. Farooq, Hopewell Junction, NY (US);

Kevin S. Petrarca, Newburgh, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/11 (2006.01);
U.S. Cl.
CPC ...
Abstract

A microelectronic assembly and related method of forming a through hole extending through a first chip and a second chip are provided. The first and second chip have confronting faces, metallic features join the first and second chips leaving a gap chips. A first etch creates a hole through the first chip. The hole has a first wall extending in a vertical direction, and a second wall sloping inwardly from the first wall to an inner opening to expose the gap. Material of the first or second chips exposed within the hole is sputtered to form a wall in the gap. A second etch extends the hole into the second chip. An electrically conductive through silicon via can then be formed extending through the first chip, the wall between the chips and into the second chip.


Find Patent Forward Citations

Volant, Richard. (2013). Integrated void fill for through silicon via (U.S. Patent No. 8609537). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8609537

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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