The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2013

Filed:

Nov. 12, 2009
Applicants:

Lee-wee Tao, Singapore, SG;

Han-guan Chew, Singapore, SG;

Harry Hak-lay Chuang, Hsin-Chu, TW;

Syun-ming Jang, Hsin-Chu, TW;

Inventors:

Lee-Wee Tao, Singapore, SG;

Han-Guan Chew, Singapore, SG;

Harry Hak-Lay Chuang, Hsin-Chu, TW;

Syun-Ming Jang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a metal gate on the substrate, the metal gate having a first gate resistance, removing a portion of the metal gate thereby forming a trench; and forming a conductive structure within the trench such that a second gate resistance of the conductive structure and remaining portion of the metal gate is lower than the first gate resistance.


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