The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Apr. 18, 2011
Po-tsun Liu, Hsinchu, TW;
Yi-teh Chou, Taipei, TW;
Li-feng Teng, Taoyuan County, TW;
Fu-hai LI, Hsinchu, TW;
Han-ping D. Shieh, Hsinchu, TW;
Wei-ting Lin, Taipei County, TW;
Ming-chin Hung, Nantou County, TW;
Chun-ching Hsiao, Taipei County, TW;
Jiun-jye Chang, Hsinchu, TW;
Po-lun Chen, Hsinchu County, TW;
Po-Tsun Liu, Hsinchu, TW;
Yi-Teh Chou, Taipei, TW;
Li-Feng Teng, Taoyuan County, TW;
Fu-Hai Li, Hsinchu, TW;
Han-Ping D. Shieh, Hsinchu, TW;
Wei-Ting Lin, Taipei County, TW;
Ming-Chin Hung, Nantou County, TW;
Chun-Ching Hsiao, Taipei County, TW;
Jiun-Jye Chang, Hsinchu, TW;
Po-Lun Chen, Hsinchu County, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.