The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
May. 29, 2012
Yutaka Mikawa, Ibaraki, JP;
Makiko Kiyomi, Ibaraki, JP;
Yuji Kagamitani, Ibaraki, JP;
Toru Ishiguro, Sendai, JP;
Yoshihiko Yamamura, Muroran, JP;
Yutaka Mikawa, Ibaraki, JP;
Makiko Kiyomi, Ibaraki, JP;
Yuji Kagamitani, Ibaraki, JP;
Toru Ishiguro, Sendai, JP;
Yoshihiko Yamamura, Muroran, JP;
Mitsubishi Chemical Corporation, Tokyo, JP;
Tohoku University, Sendai-shi, JP;
The Japan Steel Works, Ltd., Tokyo, JP;
Abstract
To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 μm.