The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Jan. 12, 2012
Chuyung Liu, Changhua, TW;
Hsing-wen Chang, Miaoli, TW;
Yaowen Chang, Hsinchu, TW;
Tao-cheng LU, Sanmin, TW;
Chuyung Liu, Changhua, TW;
Hsing-Wen Chang, Miaoli, TW;
Yaowen Chang, Hsinchu, TW;
Tao-Cheng Lu, Sanmin, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A charge storage memory is configured in a NAND array, and includes NAND strings coupled to bit lines via string select switches and includes word lines. A controller is configured to produce a program bias pulse by biasing the bit lines and string select lines in a first condition; setting a word line coupled to a target cell to a first voltage level while the bit lines and string select lines are in the first condition; thereafter, biasing the bit lines and string select lines in a second condition; and setting the word line coupled to the target cell to a second voltage level higher than the first voltage level while the bit lines and string select lines are in the second condition. Program bias pulses produced in this manner can be used in a modulated incremental stepped pulse programming sequence.