The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Jun. 01, 2009
Shen Wang, Webster, NY (US);
Eric J. Meisenzahl, Ontario, NY (US);
David N. Nichols, Fairport, NY (US);
Shen Wang, Webster, NY (US);
Eric J. Meisenzahl, Ontario, NY (US);
David N. Nichols, Fairport, NY (US);
Truesense Imaging, Inc., Rochester, NY (US);
Abstract
A charge-coupled device (CCD) image sensor includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple phases that are used to shift photo-generated charge through the horizontal CCD channel region. Distinct overflow drain regions are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region. A buffer region of the second conductivity type can be used to electrically connect each overflow drain to the one particular phase of the horizontal CCD channel. Multiple barrier regions are disposed in the layer of semiconductor material, with each barrier region disposed between each overflow drain and the one particular phase electrically connected to the drain.