The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Mar. 06, 2012
Applicants:
Toshiya Yokogawa, Nara, JP;
Ryou Kato, Osaka, JP;
Naomi Anzue, Osaka, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/207 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract
A nitride-based semiconductor device includes a p-type AlGaN layerwhose growing plane is an m-plane and an electrodeprovided on the p-type AlGaN layer. The AlGaN layerincludes a p-AlGaN contact layerthat is made of an AlGaInN (x+y+z=1, x≧0, y>0, z≧0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The p-AlGaN contact layerincludes a body regionA which contains Mg of not less than 4×10cmand not more than 2×10cmand a high concentration regionB which is in contact with the electrodeand which has a Mg concentration of not less than 1×10cm.