The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Nov. 23, 2011
Chang-tzu Wang, Taoyuan County, TW;
Mei-ling Chao, Hsinchu, TW;
Chien-ting Lin, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate of a first conductivity type, a fin, a gate, source and drain regions of a second conductivity type, and a first doped region of the second conductivity type. A plurality of isolation structures is formed on the substrate. The fin is disposed on the substrate between two adjacent isolation structures. The gate is disposed on the isolation structures and covers a portion of the fin, wherein the portion of the fin covered by the gate is of the first conductivity type. The source and drain regions is configured in the fin at respective sides of the gate. The first doped region is configured in the fin underlying the source and drain regions and adjoining the substrate. The first doped region has an impurity concentration lower than that of the source and drain regions.