The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Oct. 29, 2008
Katsutoshi Izumi, Sakai, JP;
Takashi Yokoyama, Matsumoto, JP;
Katsutoshi Izumi, Sakai, JP;
Takashi Yokoyama, Matsumoto, JP;
Air Water Inc., , JP;
Abstract
A method including a phosphorous ion introduction step for implanting phosphorous ions from a side of a surface Si layer into an SOI substrate in which the surface Si layer and an embedded oxide layer having a predetermined thickness are formed on an Si base material layer to convert the embedded oxide layer into a PSG layer to lower a softening point. An SiC forming step is performed by heating the SOI substrate having the PSG layer formed therein in an atmosphere of hydrocarbon-based gas to convert the surface Si layer into SiC. Thereafter, the resulting substrate is cooled to form a single crystal SiC layer on a surface thereof.