The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Jul. 27, 2012
Applicants:
Didier Dutartre, Meylan, FR;
Nicolas Breil, Wappingers Falls, NY (US);
Yves Campidelli, Le Moutaret, FR;
Olivier Gourhant, Goncelin, FR;
Inventors:
Didier Dutartre, Meylan, FR;
Nicolas Breil, Wappingers Falls, NY (US);
Yves Campidelli, Le Moutaret, FR;
Olivier Gourhant, Goncelin, FR;
Assignees:
STMicroelectronics S.A., Montrouge, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for depositing a silicon oxide layer on a substrate including a silicon region and a silicon-germanium region, including the steps of: forming a very thin silicon layer having a thickness ranging from 0.1 to 1 nm above silicon-germanium; and depositing a silicon oxide layer on the substrate.