The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8603847 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 10, 2013

Filed:

Jan. 16, 2012
Applicants:

Tao Jiang, Xi'an Shaanxi, CN;

Chi-chun Chen, Gloucester, MA (US);

Inventors:

Tao Jiang, Xi'an Shaanxi, CN;

Chi-Chun Chen, Gloucester, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

An improved method of fabricating a semiconductor light emitting diode (LED) is disclosed. The current blocking layer and the contact area for the n-type layer are implanted at the same time. In some embodiments, a dopant, which may be an n-type dopant, is implanted into a portion of the p-type layer to cause that portion to become either u-type or n-type. Simultaneously, the same dopant is implanted into at least a portion of the exposed n-type layer to increase its conductivity. After this implant, the dopant in both portions of the LED may be activated through the use of a single anneal cycle.


Find Patent Forward Citations

Jiang, Tao. (2013). Integration of current blocking layer and n-gan contact doping by implantation (U.S. Patent No. 8603847). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8603847

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