The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Jun. 10, 2011
Kyohei Fukuda, Matsumoto, JP;
Eiji Mochizuki, Matsumoto, JP;
Mitsutoshi Sawano, Matsumoto, JP;
Takaaki Suzawa, Matsumoto, JP;
Kyohei Fukuda, Matsumoto, JP;
Eiji Mochizuki, Matsumoto, JP;
Mitsutoshi Sawano, Matsumoto, JP;
Takaaki Suzawa, Matsumoto, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A semiconductor device and manufacturing method are disclosed which prevent breakage and chipping of a semiconductor chip and improve device characteristics. A separation layer is in a side surface of an element end portion of the chip. An eave portion is formed by a depressed portion in the element end portion. A collector layer on the rear surface of the chip extends to a side wall and bottom surface of the depressed portion, and is connected to the separation layer. A collector electrode is over the whole surface of the collector layer, and is on the side wall of the depressed portion. The thickness of an outermost electrode film is 0.05 μm or less. The collector electrode on the rear surface of the chip is joined onto an insulating substrate via a solder layer, which covers the collector electrode on a flat portion of the rear surface of the semiconductor chip.