The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Feb. 12, 2010
Applicants:
Fujio Masuoka, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Inventors:
Fujio Masuoka, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Assignee:
Unisantis Electronics Singapore PTE Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
It is intended to provide a semiconductor device comprising a circuit which has a connection between a drain region or a source region of a first MOS transistor and a drain region or a source region of a second MOS transistor. Each surround gate transistor (SGT) has a gate electrode that surrounds a sidewall of a pillar-shaped semiconductor layer.