The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Aug. 10, 2010
Makoto Miyoshi, Nagoya, JP;
Yoshitaka Kuraoka, Nagoya, JP;
Shigeaki Sumiya, Nagoya, JP;
Mikiya Ichimura, Nagoya, JP;
Tomohiko Sugiyama, Nagoya, JP;
Mitsuhiro Tanaka, Nagoya, JP;
Makoto Miyoshi, Nagoya, JP;
Yoshitaka Kuraoka, Nagoya, JP;
Shigeaki Sumiya, Nagoya, JP;
Mikiya Ichimura, Nagoya, JP;
Tomohiko Sugiyama, Nagoya, JP;
Mitsuhiro Tanaka, Nagoya, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer formed of a first group III nitride having a composition of InAlGaN (x1+y1+z1=1, z1>0); and a barrier layer formed of a second group III nitride having a composition of InAlN (x2+y2=1, x2>0, y2>0), wherein the second group III nitride is a short-range-ordered mixed crystal having a short-range order parameter α satisfying a range where 0≦α≦1.