The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Apr. 28, 2009
Alexei Ankoudinov, Redmond, WA (US);
Vladimir Rodov, Seattle, WA (US);
Richard Cordell, Boulder Creek, CA (US);
Alexei Ankoudinov, Redmond, WA (US);
Vladimir Rodov, Seattle, WA (US);
Richard Cordell, Boulder Creek, CA (US);
STMicroelectronics N.V., Amsterdam, NL;
Abstract
A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER provides faster switching of the MOSFET due to the absence of injected carriers during switching while also decreasing the level of EMI relative to discrete solutions. The integrated structure of the MOSFET and FER can be fabricated using N-, multi-epitaxial and supertrench technologies, including 0.25 μm technology. Self-aligned processing can be used.