The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Aug. 12, 2011
Yun Jong Yeo, Seoul, KR;
Hong-kee Chin, Suwon-si, KR;
Byeong Hoon Cho, Seoul, KR;
Ki-hun Jeong, Cheongan-si, KR;
Jung Suk Bang, Guri-si, KR;
Woong Kwon Kim, Cheonan-si, KR;
Sung Ryul Kim, Asan-si, KR;
Dae Cheol Kim, Hwaseong-si, KR;
Kun-wook Han, Seongnam-si, KR;
Yun Jong Yeo, Seoul, KR;
Hong-Kee Chin, Suwon-si, KR;
Byeong Hoon Cho, Seoul, KR;
Ki-Hun Jeong, Cheongan-si, KR;
Jung Suk Bang, Guri-si, KR;
Woong Kwon Kim, Cheonan-si, KR;
Sung Ryul Kim, Asan-si, KR;
Dae Cheol Kim, Hwaseong-si, KR;
Kun-Wook Han, Seongnam-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.