The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Jun. 19, 2009
Norihito Kawaguchi, Tokyo, JP;
Ryusuke Kawakami, Tokyo, JP;
Kenichiro Nishida, Tokyo, JP;
Miyuki Masaki, Tokyo, JP;
Masaru Morita, Tokyo, JP;
Norihito Kawaguchi, Tokyo, JP;
Ryusuke Kawakami, Tokyo, JP;
Kenichiro Nishida, Tokyo, JP;
Miyuki Masaki, Tokyo, JP;
Masaru Morita, Tokyo, JP;
IHI Corporation, Tokyo, JP;
Abstract
Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable. During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a maskwhich is disposed on the optical path of a laser light, and the maskis operated so that the amount of shielding is periodically increased and decreased.