The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Mar. 14, 2008
Applicants:
Shunhua Chang, South Burlington, VT (US);
Kiran V. Chatty, Williston, VT (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Mujahid Muhammad, Essex Junction, VT (US);
Inventors:
Shunhua Chang, South Burlington, VT (US);
Kiran V. Chatty, Williston, VT (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Mujahid Muhammad, Essex Junction, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A structure and method of fabricating electrostatic discharge (EDS) circuitry in an integrated circuit chip by integrating a lateral bipolar, either a p-n-p with a NMOSFET or a n-p-n with a PMOSFET within a triple well. The lateral bipolar preferably includes diodes at the I/O and/or the VDDs of the circuitry.