The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Jul. 28, 2011
Applicants:
Shinichi Chikaki, Kanagawa, JP;
Takahiro Nakayama, Ibaraki, JP;
Inventors:
Shinichi Chikaki, Kanagawa, JP;
Takahiro Nakayama, Ibaraki, JP;
Assignees:
Renesas Electronics Corporation, Kanagawa, JP;
ULVAC, Inc., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes: a first porous layer that is formed over a substrate and includes a SiOskeleton; a second porous layer that is formed immediately above the first porous layer and includes a SiOskeleton; a via wiring that is provided in the first porous layer; and a trench wiring that is buried in the second porous layer. The first porous layer has a pore density xof 40% or below and the second porous layer has a pore density xof (x+5) % or above.