The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2013

Filed:

Jun. 26, 2011
Applicants:

Shih-chieh Pu, New Taipei, TW;

Ching-ming Lee, Miaoli County, TW;

Wei-lun Hsu, Hsin-Chu Hsien, TW;

Chih-chung Wang, Hsinchu, TW;

Ke-feng Lin, Taipei, TW;

Inventors:

Shih-Chieh Pu, New Taipei, TW;

Ching-Ming Lee, Miaoli County, TW;

Wei-Lun Hsu, Hsin-Chu Hsien, TW;

Chih-Chung Wang, Hsinchu, TW;

Ke-Feng Lin, Taipei, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high-voltage semiconductor device is disclosed. The HV semiconductor device includes: a substrate; a well of first conductive type disposed in the substrate; a first doping region of second conductive type disposed in the p-well; a first isolation structure disposed in the well of first conductive type and surrounding the first doping region of second conductive type; and a first drift ring of second conductive type disposed between the first doping region of second conductive type and the first isolation structure.


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