The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Aug. 13, 2012
Te-hsun Hsu, Hsinchu County, TW;
Hsin-ming Chen, Hsinchu, TW;
Ching-sung Yang, Hsinchu, TW;
Wen-hao Ching, Hsinchu County, TW;
Wei-ren Chen, Pingtung County, TW;
Te-Hsun Hsu, Hsinchu County, TW;
Hsin-Ming Chen, Hsinchu, TW;
Ching-Sung Yang, Hsinchu, TW;
Wen-Hao Ching, Hsinchu County, TW;
Wei-Ren Chen, Pingtung County, TW;
Ememory Technology Inc., Hsin-Chu, TW;
Abstract
An erasable programmable single-poly nonvolatile memory includes a floating gate transistor having a floating gate, a gate oxide layer under the floating gate, and a channel region; and an erase gate region, wherein the floating gate is extended to and is adjacent to the erase gate region. The gate oxide layer comprises a first portion above the channel region of the floating gate transistor and a second portion above the erase gate region, and a thickness of the first portion of the gate oxide layer is different from a thickness of the second portion of the gate oxide layer.