The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Dec. 14, 2010
Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same
Hyung-su Jeong, Suwon-si, KR;
Young-soo Park, Yongin-si, KR;
Su-hee Chae, Suwon-si, KR;
Bok-ki Min, Suwon-si, KR;
Jun-youn Kim, Hwaseong-si, KR;
Hyun-gi Hong, Suwon-si, KR;
Young-jo Tak, Hwaseong-si, KR;
Jae-won Lee, Yongin-si, KR;
Hyung-su Jeong, Suwon-si, KR;
Young-soo Park, Yongin-si, KR;
Su-hee Chae, Suwon-si, KR;
Bok-ki Min, Suwon-si, KR;
Jun-youn Kim, Hwaseong-si, KR;
Hyun-gi Hong, Suwon-si, KR;
Young-jo Tak, Hwaseong-si, KR;
Jae-won Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.