The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Jul. 13, 2012
Applicants:
Junji Kotani, Isehara, JP;
Tetsuro Ishiguro, Kawasaki, JP;
Shuichi Tomabechi, Atsugi, JP;
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A compound semiconductor device includes: a substrate; a GaN compound semiconductor multilayer structure disposed over the substrate; and a stress relief layer which is AlN-based and which is disposed between the substrate and the GaN compound semiconductor multilayer structure, wherein a surface of the stress relief layer that is in contact with the GaN compound semiconductor multilayer structure includes recesses that have a depth of 5 nm or more and that are formed at a number density of 2×10cmor more.